BFP540FESD Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V (HBM) • Outstanding G = 20 dB ms Minimum noise figure NF = 0.9 dB min • Pb-free (ROHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP540FESD AUs 1=B 2=E 3=C 4=E - - TSFP-4 Maximum Ratings at T = 25 °C, unless otherwise specified A Parameter Symbol Value Unit Collector-emitter voltage V V CEO T = 25 °C 4.5 A T = -55 °C 4 A Collector-emitter voltage V 10 CES Collector-base voltage V 10 CBO Emitter-base voltage V 1 EBO Collector current I 80 mA C Base current I 8 B Total power dissipation1) P 250 mW tot T ≤ 80 °C S Junction temperature T 150 °C J Storage temperature T -55 ... 150 Stg 1T is measured on the emitter lead at the soldering point to the pcb S 1 2013-09-05

BFP540FESD Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) R 280 K/W thJS Electrical Characteristics at T = 25 °C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V 4.5 5 - V (BR)CEO I = 1 mA, I = 0 C B Collector-emitter cutoff current I - - 10 µA CES V = 10 V, V = 0 CE BE Collector-base cutoff current I - - 100 nA CBO V = 5 V, I = 0 CB E Emitter-base cutoff current I - - 10 µA EBO V = 0.5 V, I = 0 EB C DC current gain h 50 110 170 - FE I = 20 mA, V = 3.5 V, pulse measured C CE 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-05

BFP540FESD Electrical Characteristics at T = 25 °C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f 21 30 - GHz T I = 50 mA, V = 4 V, f = 1 GHz C CE Collector-base capacitance C - 0.16 0.26 pF cb V = 2 V, f = 1 MHz, V = 0 , CB BE emitter grounded Collector emitter capacitance C - 0.4 - ce V = 2 V, f = 1 MHz, V = 0 , CE BE base grounded Emitter-base capacitance C - 0.55 - eb V = 0.5 V, f = 1 MHz, V = 0 , EB CB collector grounded Minimum noise figure NF dB min I = 5 mA, V = 2 V, f = 1.8 GHz, Z = Z - 0.9 1.4 C CE S Sopt I = 5 mA, V = 2 V, f = 3 GHz, Z = Z - 1.3 - C CE S Sopt Power gain, maximum stable1) G - 20 - dB ms I = 20 mA, V = 2 V, Z = Z , C CE S Sopt Z = Z , f = 1.8 GHz L Lopt Power gain, maximum available1) G - 14.5 - dB ma I = 20 mA, V = 2 V, Z = Z , C CE S Sopt Z = Z , f = 3 GHz L Lopt Transducer gain |S |2 dB 21e IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz 15.5 18 - IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz - 13 - Third order intercept point at output2) IP3 - 24.5 - dBm VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz 1dB compression point at output P - 11 - -1dB IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz 1G = |S / S | (k-(k²-1)1/2), G = |S / S | ma 21e 12e ms 21e 12e 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2013-09-05

BFP540FESD Total power dissipation P = ƒ(T ) tot S 300 mW T O 200 T P 150 100 50 0 0 30 60 90 °C 150 T S 4 2013-09-05

Package TSFP-4 BFP540FESD 5 2013-09-05

BFP540FESD Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2013-09-05

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